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26 Results
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A FeFET-Based Hybrid Memory Accessible by Content and by AddressIEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2022, 8 (1), pp.19-26. ⟨10.1109/JXCDC.2022.3168057⟩
Journal articles
hal-03727669v1
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Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence (Invited)67th Annual IEEE International Electron Devices Meeting (IEDM 2021), Dec 2021, San Fransisco, United States. ⟨10.1109/IEDM19574.2021.9720572⟩
Conference papers
hal-03408078v1
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Influence of the electrode interface on the properties of ferroelectric HfZrO2High k Workshop 2022, NamLab, Sep 2022, Dresden, Germany
Conference papers
hal-03775873v1
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Insertion of an Ultra‐thin Interfacial Aluminium Layer for the Realisation of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction.physica status solidi (RRL) - Rapid Research Letters, 2022, 16 (10), pp.2100585. ⟨10.1002/pssr.202100585⟩
Journal articles
hal-03609773v1
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Ferroelectricity Improvement in Ultra-Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layerphysica status solidi (RRL) - Rapid Research Letters, In press, 2100583, pp.2100583. ⟨10.1002/pssr.202100583⟩
Journal articles
hal-03759538v1
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Study of Polarisation and Conduction Mechanisms in Ferroelectric Hf0.5Zr0.5O2 Down to Deep Cryogenic Temperature 4.2 KISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France
Conference papers
hal-03719069v1
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Comparative Study of sub-8 nm HZO-Based Ferroelectric Tunnel Junctions with Enhanced FerroelectricityISAF-PFM-ECAPD 2022, Jun 2022, Tours, France
Conference papers
hal-03715029v1
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Wake-Up Effect and Retention Evolutions of Hf0.5Zr0.5O2 Capacitor by Nanostructuration EngineeringISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France
Conference papers
hal-03715010v1
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Fabrication process for sub-8 nm HfZrO2-based ferroelectric tunnel junctions with enhanced propertiesEMRS 2022 Spring Meeting - Symposium E : Adaptive materials and devices for brain-inspired electronics, European Materials Research Society, May 2022, Strasbourg, France
Conference papers
hal-03690321v1
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How to play on the fabrication process of HfZrO2 ferroelectric thin film to enhance its physical propertiesEMRS 2022 Spring Meeting - Symposium N: Synthesis, processing and characterization of nanoscale multi functional oxide films VIII and 6th E-MRS & MRS-J bilateral symposium, European Materials Research Society, May 2022, Strasbourg, France
Conference papers
hal-03682220v1
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Impact of a dielectric layer at TiN/HfZrO2 interface for ferroelectric tunnel junctions applicationsJournées de la matière condensée (JMC17), Société française de physique (SFP), Aug 2021, Rennes, France
Conference papers
hal-03372588v1
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Role of ultra-thin Ti and Al interfacial layers in HfZrO2 ferroelectric tunnel junctionsEMRS 2021 Fall Meeting, European Materials Research Society, Sep 2021, Warsaw, Poland
Conference papers
hal-03368741v1
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Huge reduction of wake-up effect in ferroelectric HfZrO2 nanostructuresEMRS 2021 Fall Meeting, European Materials Research Society, Sep 2021, Warsaw, Poland
Conference papers
hal-03351082v1
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Nanostructuration effect on the properties of ferroelectric HfZrO26th edition of the International Workshop of Materials Physics, The National Institute of Materials Physics (NIMP), Sep 2021, Bucarest, Romania
Conference papers
hal-03351080v1
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FeFET based Logic-in-Memory: an overview2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS), Jun 2021, Montpellier, France. pp.1-6, ⟨10.1109/DTIS53253.2021.9505078⟩
Conference papers
hal-03323883v1
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Reduction of HfZrO2 capacitor wake-up effectConference poster hal-03273119v1 |
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Tracking polarization loss and imprint during electrical tests in sputtered TiN/HZO/TiN capacitorsNovel high-k workshop applications, NamLab, Apr 2021, Dresden, Germany
Conference papers
hal-03273116v1
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Prospects for energy-efficient edge computing with integrated HfO 2-based ferroelectric devicesIFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SOC), Oct 2018, Verona, Italy. ⟨10.1109/VLSI-SoC.2018.8644809⟩
Conference papers
hal-01916992v1
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The discovery of ferroelectricity in HfO26th Conference of Bangladesh Crystallographic Association, Bangladesh Crystallographic Association, Jan 2021, Dhaka, Bangladesh
Conference papers
hal-03111364v1
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Physical chemistry of the TiN/Hf 0.5 Zr 0.5 O 2 interfaceJournal of Applied Physics, 2020, 127 (6), pp.064105. ⟨10.1063/1.5128502⟩
Journal articles
cea-02480750v1
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Ferroelectric HfO2 based devices fabrication and remaining issuesIUMRS-ICA 2019, Sep 2019, Perth, Australia
Conference papers
hal-02310137v1
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Fabrication de dispositifs ferroélectriques à partir de HfO2 dopé et les problèmes en suspensRéunion thématique du GDR OXYFUN « Couches minces d'oxydes fonctionnels et applications en électronique et photonique », GDR OXYFUN, Oct 2019, Caen, France
Conference papers
hal-02310135v1
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Huge working pressure effect on the ferroelectric properties of RF sputtered hafnia/zirconia layersHigh-k Workshop 2019, NamLab, Jun 2019, Dresden, Germany
Conference papers
hal-02281215v1
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Ferroelectric HfO2 based devices fabrication and remaining issuesIEEE 39th International Conference on ELECTRONICS AND NANOTECHNOLOGY ELNANO-2019, IEEE, Apr 2019, Kyiv, Ukraine
Conference papers
hal-02281214v1
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Dramatic impact of pressure and annealing temperature on the properties of sputtered ferroelectric HZO layersAPL Materials, 2019, 7 (8), pp.081109. ⟨10.1063/1.5110894⟩
Journal articles
hal-02273286v1
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Characterization of ferroelectric hafnium/zirconium oxide solid solutions deposited by reactive magnetron sputteringJournal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2019, 37 (2), pp.021203. ⟨10.1116/1.5060643⟩
Journal articles
hal-02062583v1
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