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Article Dans Une Revue Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Année : 2019

Characterization of ferroelectric hafnium/zirconium oxide solid solutions deposited by reactive magnetron sputtering

Jordan Bouaziz
Pedro Rojo Romeo
Nicolas Baboux

Résumé

The room temperature deposition of 10 nm-thick ferroelectric hafnium/zirconium oxide, (Hf, Zr)O 2 , thin solid films is achieved with a single hafnium/zirconium, Hf/Zr, alloy target by reactive magnetron sputtering. After rapid thermal annealing (RTA), crystallization of our samples is analyzed by grazing incidence x-ray diffraction. Changing the pressure inside the chamber during deposition leads to grow amorphous or monoclinic phase (m-phase). The authors demonstrate that if the (Hf, Zr)O 2 films are crystallized in the m-phase after deposition, no ferroelectric/orthorhombic phase can be obtained further. On the contrary, when the as-deposited film is amorphous, the ferroelectric/orthorhombic phase appears after the RTA. Published by the AVS. https://doi.org/10.1116/1.5060643
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hal-02062583 , version 1 (08-04-2019)

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Jordan Bouaziz, Pedro Rojo Romeo, Nicolas Baboux, Bertrand Vilquin. Characterization of ferroelectric hafnium/zirconium oxide solid solutions deposited by reactive magnetron sputtering. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2019, 37 (2), pp.021203. ⟨10.1116/1.5060643⟩. ⟨hal-02062583⟩
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