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Communication Dans Un Congrès Année : 2022

Comparative Study of sub-8 nm HZO-Based Ferroelectric Tunnel Junctions with Enhanced Ferroelectricity

Résumé

The synthesis of sub-8 nm HZO films that exhibit robust ferroelectricity is a challenging task. Interface engineering is a promising method to improve the electrical performances and the scalability of HZO-based devices. In this work, we propose a comparative study of 6 nm HZO-based ferroelectric tunnel junctions with enhanced ferroelectricity, which will be considered for the demonstration of synaptic learning mechanisms for neuromorphic applications.
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Dates et versions

hal-03715029 , version 1 (06-07-2022)

Identifiants

  • HAL Id : hal-03715029 , version 1

Citer

Greta Segantini, Benoit Manchon, Rabei Barhoumi, Pedro Rojo Romeo, Ingrid Cañero Infante, et al.. Comparative Study of sub-8 nm HZO-Based Ferroelectric Tunnel Junctions with Enhanced Ferroelectricity. ISAF-PFM-ECAPD 2022, Jun 2022, Tours, France. ⟨hal-03715029⟩
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