Wake-Up Effect and Retention Evolutions of Hf0.5Zr0.5O2 Capacitor by Nanostructuration Engineering - 3eFERRO Accéder directement au contenu
Communication Dans Un Congrès Année : 2022

Wake-Up Effect and Retention Evolutions of Hf0.5Zr0.5O2 Capacitor by Nanostructuration Engineering

Résumé

We report the fabrication of two samples deposited by magnetron sputtering with different nanostructures: mesa (M) and non-mesa(NM). Although the N-sample and NM-samples show very close Pr values, the two samples show completely different electrical behaviors. During cycling, the increase of Pr value for the NM-sample is more than an order of magnitude higher than the M-sample. It is accompanied by a decrease of the endurance which is two order of magnitude higher for the NM-sample than for the M-sample. Retention is also modulated by the nanostructuration.
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Dates et versions

hal-03715010 , version 1 (06-07-2022)

Identifiants

  • HAL Id : hal-03715010 , version 1

Citer

Jordan Bouaziz, Greta Segantini, Benoit Manchon, Rabei Barhoumi, Infante Ingrid C., et al.. Wake-Up Effect and Retention Evolutions of Hf0.5Zr0.5O2 Capacitor by Nanostructuration Engineering. ISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France. ⟨hal-03715010⟩
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